High voltage NPN bipolar junction transistor (BJT) in a 3-lead SC-70 (SOT-323) package, supplied on a 3000-piece tape and reel. Features a 300V collector-emitter breakdown voltage (VCEO) and a 300V collector-base voltage (VCBO). Offers a maximum collector current of 150mA and a minimum DC current gain (hFE) of 25. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 450mW. This RoHS compliant and halogen-free component is designed for high-voltage applications.
PackageSC
Current Rating150mA
PolarityNPN
Power450mW
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Technical Specifications
Onsemi MSD42WT1G technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 150mA |
| Emitter Base Voltage (VEBO) | 6V |
| Halogen Free | Halogen Free |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 450mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 300V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MSD42WT1G Datasheet
Download the complete datasheet for Onsemi MSD42WT1G to view detailed technical specifications.
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