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Technical Specifications
Onsemi MTB2P50ET4G technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | -500V |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 6R |
| Element Configuration | Single |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.183nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 6R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MTB2P50ET4G Datasheet
Download the complete datasheet for Onsemi MTB2P50ET4G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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