N-channel enhancement mode silicon power MOSFET designed for surface mounting. Features a 250V drain-source voltage, 9A continuous drain current, and 450mΩ maximum drain-source resistance at 10V. Housed in a 3-pin D2PAK (TO-263) double deca watt package with gull-wing leads, offering a typical gate charge of 26nC at 10V and input capacitance of 783pF at 25V. Operates across a wide temperature range of -55°C to 150°C with a maximum power dissipation of 2500mW.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Onsemi MTB9N25E technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-263 |
| Package/Case | D2PAK |
| Package Description | Double Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.29(Max) |
| Package Width (mm) | 9.65(Max) |
| Package Height (mm) | 4.83(Max) |
| Seated Plane Height (mm) | 4.83(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 250V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 9A |
| Material | Si |
| Maximum Drain Source Resistance | 450@10VmOhm |
| Typical Gate Charge @ Vgs | 26@10VnC |
| Typical Gate Charge @ 10V | 26nC |
| Typical Input Capacitance @ Vds | 783@25VpF |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi MTB9N25E Datasheet
Download the complete datasheet for Onsemi MTB9N25E to view detailed technical specifications.
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