N-channel enhancement mode power MOSFET featuring 60V drain-source voltage and 12A continuous drain current. This single-element transistor utilizes TMOS IV process technology and is housed in a 3-pin TO-220AB through-hole package. Key electrical characteristics include a maximum gate-source voltage of ±15V, a gate threshold voltage of 2V, and a low drain-source on-resistance of 180 mOhm at 5V. The component offers a maximum power dissipation of 40,000 mW and operates across a temperature range of -65°C to 150°C.
PackageTO-220AB
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi MTP3055EL technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220AB |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS IV |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±15V |
| Maximum Continuous Drain Current | 12A |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 180@5VmOhm |
| Typical Gate Charge @ Vgs | 7.2@5VnC |
| Typical Input Capacitance @ Vds | 400@25V|1000@0VpF |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Onsemi MTP3055EL Datasheet
Download the complete datasheet for Onsemi MTP3055EL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.