
NPN Bipolar Digital Transistor (BRT) in a compact SC package, featuring a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 100mA. This RoHS and Halogen Free component offers a low 250mV collector-emitter saturation voltage and a minimum hFE of 60. With a maximum power dissipation of 338mW, it operates across a temperature range of -55°C to 150°C. Supplied on a 3000-piece tape and reel, this transistor measures 2.9mm in length, 1.5mm in width, and 1.09mm in height.
Onsemi MUN2212T1G technical specifications.
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Halogen Free | Halogen Free |
| Height | 1.09mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 338mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 338mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Width | 1.5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MUN2212T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
