The MUN5312DW1T1 is a bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum operating temperature of 150°C. It has a maximum collector current of 100mA and a maximum power dissipation of 250mW. The transistor is available in a surface mount package with a lead-free status of no. It is not RoHS compliant and has a packaging quantity of 3000 units per reel.
Current Rating100mA
MountingSurface Mount
PolarityNPN, PNP
Power187mW
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Technical Specifications
Onsemi MUN5312DW1T1 technical specifications.
General
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Lead Free | Contains Lead |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 187mW |
| RoHS Compliant | No |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MUN5312DW1T1 Datasheet
Download the complete datasheet for Onsemi MUN5312DW1T1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.