Digital BJT transistor, NPN/PNP polarity, featuring a 50V collector-emitter breakdown voltage and 100mA continuous collector current. This component offers a maximum power dissipation of 250mW and a minimum hFE of 80. Packaged in a compact 6-pin SC-88 (SOT-363-6) surface-mount package, it operates across a temperature range of -55°C to 150°C and is supplied on tape and reel.
PackageSOT-363-6
Current Rating100mA
PolarityNPN, PNP
Power187mW
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Technical Specifications
Onsemi MUN5314DW1T1G technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Height | 0.9mm |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 187mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MUN5314DW1T1G Datasheet
Download the complete datasheet for Onsemi MUN5314DW1T1G to view detailed technical specifications.
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