
Complementary Bipolar Digital Transistor (BRT) in a SOT-363-6 package. Features 50V Collector Base Voltage (VCBO) and 50V Collector Emitter Voltage (VCEO). Offers a Continuous Collector Current of 100mA and a Collector Emitter Saturation Voltage of 250mV. Operates from -55°C to 150°C with a maximum power dissipation of 250mW. Supplied on a 3000-unit tape and reel.
Onsemi MUN5330DW1T1G technical specifications.
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 1mm |
| hFE Min | 3 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Frequency | 10kHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 250mW |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 187mW |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MUN5330DW1T1G to view detailed technical specifications.
No datasheet is available for this part.