Dual input MOSFET/IGBT driver with high and low-side capabilities, featuring a 2.2A maximum output current and 620.3V output voltage. This surface mount integrated circuit operates within a 10V to 20V supply voltage range, with a maximum power dissipation of 178mW. It offers a propagation delay of 170ns and a fall time of 40ns, suitable for applications requiring efficient power switching. The component is RoHS compliant and packaged in a halogen-free, lead-free SOIC-8 narrow body on a 2500-piece tape and reel.
PackageSOIC
Current6.5mA
MountingSurface Mount
Power178mW
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Technical Specifications
Onsemi NCP5181DR2G technical specifications.
General
| Package/Case | SOIC |
| Fall Time | 40ns |
| Halogen Free | Halogen Free |
| Height | 1.5mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 2.2A |
| Max Power Dissipation | 178mW |
| Max Supply Current | 6.5mA |
| Max Supply Voltage | 20V |
| Min Supply Voltage | 10V |
| Mount | Surface Mount |
| Number of Drivers | 2 |
| Number of Outputs | 2 |
| Output Current | 2.2A |
| Output Voltage | 620.3V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 178mW |
| Propagation Delay | 170ns |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Supply Current | 6.5mA |
| Termination | SMD/SMT |
| Turn-On Delay Time | 170ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NCP5181DR2G Datasheet
Download the complete datasheet for Onsemi NCP5181DR2G to view detailed technical specifications.
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