High-voltage, high-current Darlington transistor array featuring seven NPN elements in a surface-mount SOIC package. Offers a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. Boasts a minimum hFE of 1000 and a low collector-emitter saturation voltage of 1.6V. Operates across a wide temperature range from -40°C to 125°C, with RoHS and halogen-free compliance. Packaged in a 2500-piece tape and reel.
PackageSOIC
Current Rating500mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Onsemi NCV1413BDR2G technical specifications.
General
| Package/Case | SOIC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 1.6V |
| Current Rating | 500mA |
| Halogen Free | Halogen Free |
| Height | 1.5mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 10mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Mount | Surface Mount |
| Number of Channels | 7 |
| Number of Elements | 7 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Weight | 0.023492oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NCV1413BDR2G Datasheet
Download the complete datasheet for Onsemi NCV1413BDR2G to view detailed technical specifications.
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