Automotive-grade IGBT gate driver IC featuring internal galvanic isolation for high current and high efficiency applications. This 16-terminal device operates from -40°C to 125°C and supports supply voltages up to 24V, with a nominal supply voltage of 15V and a maximum supply current of 6mA. The interface is buffer or inverter-based, designed for gated input characteristics. Packaged in an R-PDSO-G16 (DWR2) with dual terminal positions, this component meets AEC-Q100 screening levels.
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Technical Specifications
Onsemi NCV57000DWR2G technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 16 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G16 |
| Width | 7.5 |
| Length | 10.3 |
| Number of Functions | 1 |
| Temperature Grade | AUTOMOTIVE |
| Supply Current-Max | 6 |
| Supply Voltage-Nom | 15 |
| Supply Voltage-Max | 24 |
| Screening Level | AEC-Q100 |
| Interface IC Type | BUFFER OR INVERTER BASED IGBT DRIVER |
| Input Characteristics | GATED |
Compliance
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Onsemi NCV57000DWR2G Datasheet
Download the complete datasheet for Onsemi NCV57000DWR2G to view detailed technical specifications.
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