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Technical Specifications
Onsemi NCV8402DDR2G technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | 42V |
| Drain to Source Resistance | 165mR |
| Fault Protection | Over Voltage, Over Temperature |
| Gate to Source Voltage (Vgs) | 14V |
| Interface | On/Off |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 2A |
| Mount | Surface Mount |
| Number of Outputs | 2 |
| Output Configuration | Low Side |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.62W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q100 |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NCV8402DDR2G Datasheet
Download the complete datasheet for Onsemi NCV8402DDR2G to view detailed technical specifications.
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