P-channel MOSFET, logic-level enhancement mode, featuring a -20V drain-source breakdown voltage and a continuous drain current of 24A. Offers a low drain-source on-resistance of 50mΩ maximum, with a typical value of 41mΩ. Designed for surface mounting in a TO-263AB package, this single-element transistor operates from -55°C to 175°C with a maximum power dissipation of 60W. Key switching characteristics include a 15ns turn-on delay and a 70ns fall time.
PackageTO-263AB
Current Rating-24A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi NDB6020P technical specifications.
General
| Package/Case | TO-263AB |
| Continuous Drain Current (ID) | 24A |
| Current Rating | -24A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 41mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 50mR |
| Element Configuration | Single |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 11.33mm |
| Input Capacitance | 1.59nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -700mV |
| Turn-Off Delay Time | 120ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | -20V |
| Weight | 1.31247g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDB6020P Datasheet
Download the complete datasheet for Onsemi NDB6020P to view detailed technical specifications.
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