P-Channel MOSFET, logic level enhancement mode, featuring a -30V drain-source voltage and a continuous drain current of 30A. Offers a maximum on-resistance of 25mΩ and a power dissipation of 75W. Designed for surface mounting in a D2PAK package, this single-element transistor operates from -55°C to 175°C and is RoHS compliant.
Onsemi NDB6030PL technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 30A |
| Current Rating | -30A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 25mR |
| Element Configuration | Single |
| Fall Time | 52ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 11.33mm |
| Input Capacitance | 1.57nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 12.5ns |
| DC Rated Voltage | -30V |
| Weight | 1.31247g |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NDB6030PL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
