
Dual N and P-Channel Enhancement Mode Field Effect Transistor for switching applications. Features 60V Drain to Source Breakdown Voltage and 60V Dual Supply Voltage. Offers 510mA Continuous Drain Current and 350mA Current Rating. On-resistance is 1 Ohm to 2 Ohms. Operates from -55°C to 150°C in a SOT-23-6 surface mount package.
Onsemi NDC7001C technical specifications.
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 510mA |
| Current Rating | 350mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 2R |
| Dual Supply Voltage | 60V |
| Fall Time | 10ns |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 20pF |
| JESD-30 Code | R-PDSO-G6 |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960mW |
| Moisture Sensitivity Level | 1 |
| Mount | Surface Mount |
| Nominal Vgs | 2.1V |
| Number of Elements | 2 |
| Package Body Material | Plastic |
| Package Quantity | 3000 |
| Package Shape | Rectangular |
| Packaging | Tape and Reel |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity | P-CHANNEL |
| Power Dissipation | 960mW |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Threshold Voltage | 2.1V |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-Off Delay Time | 8ns |
| Weight | 0.036g |
| Width | 1.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NDC7001C to view detailed technical specifications.
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