Dual N-Channel Enhancement Mode Field Effect Transistor, 50V Drain to Source Breakdown Voltage, 2 Ohm Drain-Source On Resistance. Features 510mA Continuous Drain Current, 2 N-Channel FETs, and a 1.9V Threshold Voltage. Surface mountable in a SOT-23-6 package, this component offers 6ns turn-on delay and 11ns turn-off delay. Operates from -55°C to 150°C with a maximum power dissipation of 960mW. Packaged on a 3000-piece tape and reel.
PackageSOT-23-6
Current Rating350mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi NDC7002N technical specifications.
General
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 510mA |
| Current Rating | 350mA |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 50V |
| Drain-source On Resistance-Max | 2R |
| Dual Supply Voltage | 50V |
| Element Configuration | Dual |
| Fall Time | 6ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 20pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.9V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 960mW |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.9V |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 6ns |
| DC Rated Voltage | 50V |
| Weight | 0.036g |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDC7002N Datasheet
Download the complete datasheet for Onsemi NDC7002N to view detailed technical specifications.
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