N-channel Power MOSFET featuring 600V drain-source breakdown voltage and a continuous drain current of 2.2A. This single element MOSFET offers a maximum drain-source on-resistance of 4.8 Ohms and a power dissipation of 57W. Packaged in a TO-251-3 (DPAK) case, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key switching characteristics include a fall time of 7ns, turn-off delay time of 15ns, and turn-on delay time of 9ns.
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| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 4R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 4.8R |
| Element Configuration | Single |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 7.62mm |
| Input Capacitance | 274pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 57W |
| Radiation Hardening | No |
| Rds On Max | 4.8R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 9ns |
| Width | 2.38mm |
| RoHS | Compliant |
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Onsemi product discontinuance notice (PD21859X) for specific MOSFETs due to chip supplier wafer technology exit. Last time buy: Dec 15, 2017.
