N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 3A continuous drain current. This single element MOSFET offers a maximum drain-source on-resistance of 2.7 Ohms. Designed for surface mount applications, it is housed in a DPAK package with a 6.73mm length, 6.22mm width, and 2.38mm height. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 61W. RoHS compliant and lead-free.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi NDD04N50ZT4G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 2.7R |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 2.7R |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.38mm |
| Input Capacitance | 308pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 61W |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 61W |
| Radiation Hardening | No |
| Rds On Max | 2.7R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 9ns |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NDD04N50ZT4G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
These are design resources that include the Onsemi NDD04N50ZT4G
Onsemi product discontinuance notice (PD21859X) for specific MOSFETs due to chip supplier wafer technology exit. Last time buy: Dec 15, 2017.
