N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 3A continuous drain current. This single element MOSFET offers a maximum drain-source on-resistance of 2.7 Ohms. Designed for surface mount applications, it is housed in a DPAK package with a 6.73mm length, 6.22mm width, and 2.38mm height. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 61W. RoHS compliant and lead-free.
PackageDPAK
PolarityN-CHANNEL
Power61W
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Technical Specifications
Onsemi NDD04N50ZT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 2.7R |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 2.7R |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.38mm |
| Input Capacitance | 308pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 61W |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 61W |
| Radiation Hardening | No |
| Rds On Max | 2.7R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 9ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDD04N50ZT4G Datasheet
Download the complete datasheet for Onsemi NDD04N50ZT4G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.