N-channel enhancement mode power MOSFET featuring 500V drain-source voltage and 4.7A continuous drain current. This single-element transistor is housed in a TO-251AA IPAK package with a 3-pin through-hole configuration and a tab. Key specifications include a maximum drain-source on-resistance of 1500 mOhm at 10V, typical gate charge of 18.5 nC at 10V, and typical input capacitance of 530 pF at 25V. Maximum power dissipation reaches 83W, with an operating temperature range of -55°C to 150°C.
PackageIPAK
MountingThrough Hole
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Technical Specifications
Onsemi NDD05N50Z-1G technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-251 |
| Package/Case | IPAK |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 2.38(Max) |
| Package Height (mm) | 6.35(Max) |
| Seated Plane Height (mm) | 8.63(Max) |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-251AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 4.7A |
| Maximum Drain Source Resistance | 1500@10VmOhm |
| Typical Gate Charge @ Vgs | 18.5@10VnC |
| Typical Gate Charge @ 10V | 18.5nC |
| Typical Input Capacitance @ Vds | 530@25VpF |
| Maximum Power Dissipation | 83000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi NDD05N50Z-1G Datasheet
Download the complete datasheet for Onsemi NDD05N50Z-1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.