N-channel Power MOSFET featuring 500V drain-source voltage and 4.7A continuous drain current. This single-element transistor operates in enhancement mode with a maximum gate-source voltage of ±30V. Housed in a 3-pin DPAK (TO-252AA) surface-mount package with gull-wing leads, it offers a maximum power dissipation of 83W and a low drain-source on-resistance of 1500mΩ at 10V.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Onsemi NDD05N50ZT4G technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 6.22(Max) |
| Package Height (mm) | 2.38(Max) |
| Seated Plane Height (mm) | 2.51(Max) |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 4.7A |
| Maximum Drain Source Resistance | 1500@10VmOhm |
| Typical Gate Charge @ Vgs | 18.5@10VnC |
| Typical Gate Charge @ 10V | 18.5nC |
| Typical Input Capacitance @ Vds | 530@25VpF |
| Maximum Power Dissipation | 83000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi NDD05N50ZT4G Datasheet
Download the complete datasheet for Onsemi NDD05N50ZT4G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.