
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and a continuous drain current of 3.1A. Offers a maximum drain-source on-resistance of 3.6 Ohms. Designed for efficient switching with turn-on delay time of 9ns and fall time of 10ns. Housed in a TO-220-3 package, this component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 27W.
Onsemi NDF03N60ZG technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 3.3R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 3.6R |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.12mm |
| Input Capacitance | 372pF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27W |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 3.6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3.9V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 9ns |
| Width | 4.9mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NDF03N60ZG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
