N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 10A continuous drain current. Offers a low 750mΩ drain-source resistance and 39W maximum power dissipation. Designed for efficient switching with fast turn-on (15ns) and turn-off (40ns) delay times, and a 23ns fall time. Packaged in a TO-220-3 configuration, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-220-3
PolarityN-CHANNEL
Power39W
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Technical Specifications
Onsemi NDF10N60ZH technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 650mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.12mm |
| Input Capacitance | 1.645nF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 39W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 39W |
| Radiation Hardening | No |
| Rds On Max | 750mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 15ns |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDF10N60ZH Datasheet
Download the complete datasheet for Onsemi NDF10N60ZH to view detailed technical specifications.
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