N-channel power MOSFET featuring 620V drain-source breakdown voltage and 10A continuous drain current. Offers a maximum drain-source on-resistance of 750mΩ. Designed for through-hole mounting in a TO-220 package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 36W. Key switching characteristics include a 15ns turn-on delay and 21ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power36W
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Technical Specifications
Onsemi NDF10N62ZG technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 620V |
| Drain to Source Resistance | 650mR |
| Drain to Source Voltage (Vdss) | 620V |
| Drain-source On Resistance-Max | 750MR |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.12mm |
| Input Capacitance | 1.425nF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 36W |
| Radiation Hardening | No |
| Rds On Max | 750mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 15ns |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDF10N62ZG Datasheet
Download the complete datasheet for Onsemi NDF10N62ZG to view detailed technical specifications.
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