N-Channel Power MOSFET featuring 1500V drain-source voltage and 100mA continuous drain current. This through-hole component offers a maximum on-resistance of 150 Ohms. Key switching parameters include an 8ns turn-on delay and 43ns turn-off delay, with a 280ns fall time. Housed in a TO-220-3 package, it operates from -55°C to 150°C and supports a 30V gate-source voltage.
Onsemi NDFPD1N150CG technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Resistance | 100R |
| Drain to Source Voltage (Vdss) | 1.5kV |
| Fall Time | 280ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.7mm |
| Input Capacitance | 80pF |
| Lead Free | Lead Free |
| Length | 28.85mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 150R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.211644oz |
| Width | 10.16mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NDFPD1N150CG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.