Onsemi NDM3000 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5ns |
| FET Type | 3 N and 3 P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 360pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 90mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NDM3000 to view detailed technical specifications.
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