N-channel Power MOSFET with 500V drain-source voltage and 5A continuous drain current. Features a TO-220AB package for through-hole mounting, offering a single element configuration. Maximum drain-source on-resistance is 1500 mOhm at 10V, with a typical gate charge of 18.5 nC at 10V. Operating temperature range spans from -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Onsemi NDP05N50ZG technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220AB |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.28(Max) |
| Package Width (mm) | 4.82(Max) |
| Package Height (mm) | 9.28(Max) |
| Seated Plane Height (mm) | 19.68(Max) |
| Pin Pitch (mm) | 2.66(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 5A |
| Maximum Drain Source Resistance | 1500@10VmOhm |
| Typical Gate Charge @ Vgs | 18.5@10VnC |
| Typical Gate Charge @ 10V | 18.5nC |
| Typical Input Capacitance @ Vds | 530@25VpF |
| Maximum Power Dissipation | 117000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Onsemi NDP05N50ZG Datasheet
Download the complete datasheet for Onsemi NDP05N50ZG to view detailed technical specifications.
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