
P-channel enhancement mode JFET with -60V drain-source breakdown voltage and -120mA continuous drain current. Features 10Ω drain-source resistance, 2.5ns turn-on delay, and 6.3ns fall time. Operates with a gate-source voltage up to 20V and has a threshold voltage of -1.7V. Packaged in SOT-23 for surface mounting, this RoHS compliant component offers 360mW power dissipation and a maximum operating temperature of 150°C.
Onsemi NDS0610 technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 120mA |
| Current Rating | -120mA |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 10R |
| Drain to Source Voltage (Vdss) | 60V |
| Dual Supply Voltage | -60V |
| Element Configuration | Single |
| Fall Time | 6.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 79pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Nominal Vgs | -1.7V |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 360mW |
| Radiation Hardening | No |
| Rds On Max | 10R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.7V |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 2.5ns |
| DC Rated Voltage | -60V |
| Weight | 0.03g |
| Width | 3.05mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NDS0610 to view detailed technical specifications.
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