N-channel logic-level enhancement mode field-effect transistor designed for surface mounting in a TO-236-3 package. Features a 20V drain-to-source breakdown voltage and a continuous drain current of 1.3A. Offers a low drain-source on-resistance of 160mΩ (max) and a maximum power dissipation of 500mW. Operates within a temperature range of -55°C to 150°C, with a nominal gate-to-source voltage of 700mV. Supplied on a 3000-piece tape and reel.
PackageTO-236-3
Current Rating1.3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi NDS331N technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
1.3A
Current Rating
1.3A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
210mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
160mR
Element Configuration
Single
Fall Time
25ns
Gate to Source Voltage (Vgs)
8V
Height
0.94mm
Input Capacitance
162pF
Lead Free
Lead Free
Length
2.92mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Nominal Vgs
700mV
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
500mW
Radiation Hardening
No
Rds On Max
160mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
700mV
Turn-Off Delay Time
10ns
Turn-On Delay Time
5ns
DC Rated Voltage
20V
Weight
0.03g
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NDS331N Datasheet
Download the complete datasheet for Onsemi NDS331N to view detailed technical specifications.
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