N-Channel Logic Level Enhancement Mode Field Effect Transistor, 30V Vdss, 1.1A continuous drain current, and 160mΩ Rds On. This single-element JFET features a TO-236-3 surface mount package, with a maximum power dissipation of 460mW. It offers a turn-on delay of 9ns and a fall time of 16ns, operating within a temperature range of -55°C to 150°C. Packaged on a 3000-piece tape and reel, this RoHS compliant component is suitable for various electronic applications.
PackageTO-236-3
Current Rating1.1A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi NDS351N technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 1.1A |
| Current Rating | 1.1A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 140pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 460mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | 30V |
| Weight | 0.03g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDS351N Datasheet
Download the complete datasheet for Onsemi NDS351N to view detailed technical specifications.
No datasheet is available for this part.
Product Images
