P-Channel JFET, logic level enhancement mode, surface mount transistor in SOT-23 package. Features -30V drain-source breakdown voltage, 1.1A continuous drain current, and 200mΩ drain-source resistance at nominal Vgs of -2V. Operates from -55°C to 150°C with 500mW power dissipation. Includes 8ns turn-on delay and 17ns fall time. Supplied on a 3000-piece tape and reel.
PackageSOT-23
Current Rating-1.1A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi NDS356AP technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 1.1A |
| Current Rating | -1.1A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | -30V |
| Element Configuration | Single |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 280pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Nominal Vgs | -2V |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | -30V |
| Weight | 0.03g |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDS356AP Datasheet
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