
The NDS8410 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 2.5W and a drain to source breakdown voltage of 30V. The device has a continuous drain current rating of 10A and a drain to source resistance of 15mR. It is packaged in a SOIC package and is not RoHS compliant.
Onsemi NDS8410 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.35nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 15mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 56ns |
| DC Rated Voltage | 30V |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi NDS8410 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
