NDS8410A

N-CHANNEL JFET, SOIC package, surface mount transistor with a continuous drain current of 10.8A and a drain-to-source breakdown voltage of 30V. Features a low drain-to-source resistance of 7.7 Ohms and a maximum power dissipation of 2.5W. Operates across a temperature range of -55°C to 150°C, with a gate-to-source voltage rating of 20V. Includes input capacitance of 1.62nF and fall time of 12ns.