N-CHANNEL JFET, SOIC package, surface mount transistor with a continuous drain current of 10.8A and a drain-to-source breakdown voltage of 30V. Features a low drain-to-source resistance of 7.7 Ohms and a maximum power dissipation of 2.5W. Operates across a temperature range of -55°C to 150°C, with a gate-to-source voltage rating of 20V. Includes input capacitance of 1.62nF and fall time of 12ns.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi NDS8410A datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 10.8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7.7R |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.62nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 12mR |
| Series | PowerTrench® |
| Turn-Off Delay Time | 27ns |
| Weight | 0.13g |
| RoHS | Not CompliantNo |
Download the complete datasheet for Onsemi NDS8410A to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
