Single P-channel enhancement mode field-effect transistor with a continuous drain current of 6.5A and a drain-source breakdown voltage of -20V. Features a low drain-source on-resistance of 35mΩ, ideal for surface mount applications. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1W. This RoHS compliant component offers fast switching times, including a turn-on delay of 20ns and a fall time of 63ns.
PackageSOIC
Current Rating-6.7A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi NDS8434 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.5A |
| Current Rating | -6.7A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 35mR |
| Element Configuration | Single |
| Fall Time | 63ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 2.33nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -700mV |
| Turn-Off Delay Time | 169ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | -20V |
| Weight | 0.2304g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDS8434 Datasheet
Download the complete datasheet for Onsemi NDS8434 to view detailed technical specifications.
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