P-channel JFET transistor for surface mount applications, featuring a 30V Drain to Source Voltage (Vdss) and a continuous drain current of 7.9A. This single-element transistor offers a low Drain to Source Resistance (Rds On Max) of 23mR and a maximum power dissipation of 2.5W. It operates within a temperature range of -55°C to 150°C and is supplied in an SOIC package. Key electrical characteristics include an input capacitance of 1.8nF, a fall time of 46ns, and a turn-off delay time of 95ns.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Onsemi NDS8435A technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.9A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | -30V |
| Element Configuration | Single |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -1.3V |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 23mR |
| Reach SVHC Compliant | No |
| Turn-Off Delay Time | 95ns |
| Weight | 0.2304g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NDS8435A Datasheet
Download the complete datasheet for Onsemi NDS8435A to view detailed technical specifications.
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