Dual N-Channel Power Field-Effect Transistor in SOIC package. Features 30V Drain to Source Breakdown Voltage and 35mΩ maximum Drain-source On Resistance at a nominal Vgs of 1.6V. Supports a continuous drain current of 5.3A with a maximum power dissipation of 2W. Operates across a temperature range of -55°C to 150°C, with typical fall and turn-off delay times of 10ns and 29ns respectively. Surface mountable, supplied in tape and reel packaging.
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| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.3A |
| Current Rating | 5.3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 35mR |
| Dual Supply Voltage | 30V |
| Element Configuration | Dual |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 720pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.6V |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 35mR |
| Reach SVHC Compliant | No |
| Row Spacing | 6.3mm |
| Turn-Off Delay Time | 29ns |
| DC Rated Voltage | 30V |
| Weight | 0.2304g |
| Width | 4.05mm |
| RoHS | Not Compliant |
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