P-channel MOSFET, 30V drain-source breakdown voltage, 3.4A continuous drain current, and 130mΩ Rds On max. Features a 350pF input capacitance, 8ns fall time, and 21ns turn-off delay time. Packaged in an 8-pin SOIC surface-mount package, this RoHS compliant component operates from -55°C to 150°C with a 2.5W power dissipation.
PackageSOIC
Current Rating-3.6A
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Onsemi NDS9400A technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.4A |
| Current Rating | -3.6A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | -30V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 350pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -1.6V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 130mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 21ns |
| DC Rated Voltage | -30V |
| Width | 4.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDS9400A Datasheet
Download the complete datasheet for Onsemi NDS9400A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
