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Technical Specifications
Onsemi NDS9925A technical specifications.
General
| Capacitance | 25pF |
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 4.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Output Current | 6A |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDS9925A Datasheet
Download the complete datasheet for Onsemi NDS9925A to view detailed technical specifications.
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