Dual P-Channel MOSFET, logic-level, SOIC package. Features 30V Drain to Source Voltage (Vdss) and 2.9A Continuous Drain Current (ID). Offers 130mR Drain to Source Resistance (Rds On Max) and 350pF Input Capacitance. Operates from -55°C to 150°C with a 900mW Max Power Dissipation. Surface mount termination, RoHS compliant.
PackageSOIC
Current Rating-2.9A
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Onsemi NDS9953A technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2.9A |
| Current Rating | -2.9A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | -30V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Nominal Vgs | -1.6V |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 130mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Termination | SMD/SMT |
| Threshold Voltage | -1.6V |
| Turn-Off Delay Time | 21ns |
| DC Rated Voltage | -30V |
| Width | 4.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDS9953A Datasheet
Download the complete datasheet for Onsemi NDS9953A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
