N-Channel MOSFET, 60V Drain-Source Breakdown Voltage, 2.7A Continuous Drain Current, and 200mΩ Maximum Drain-Source On-Resistance. Features a 3V Threshold Voltage and 10ns Turn-On/Turn-Off Delay Times. Surface mountable in a SOT-223 package, this component offers a 3W Power Dissipation and operates across a -55°C to 175°C temperature range.
PackageSOT-223
Current Rating2.7A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi NDT014 technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
2.7A
Current Rating
2.7A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
200mR
Dual Supply Voltage
60V
Element Configuration
Single
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.7mm
Input Capacitance
155pF
Lead Free
Lead Free
Length
6.7mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Nominal Vgs
3V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3W
Radiation Hardening
No
Rds On Max
200mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
3V
Turn-Off Delay Time
10ns
Turn-On Delay Time
10ns
DC Rated Voltage
60V
Weight
0.188g
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NDT014 Datasheet
Download the complete datasheet for Onsemi NDT014 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.