P-Channel MOSFET, surface mount, SOT-223 package. Features -30V drain-source breakdown voltage, 5.9A continuous drain current, and a maximum on-resistance of 50mΩ. Operates with a gate-source voltage up to 20V and a threshold voltage of -2.7V. Offers a maximum power dissipation of 3W and a wide operating temperature range from -55°C to 150°C. RoHS compliant and lead-free.
Onsemi NDT454P technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 5.9A |
| Current Rating | -5.9A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 38mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 50mR |
| Dual Supply Voltage | -30V |
| Element Configuration | Single |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.7mm |
| Input Capacitance | 950pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Termination | SMD/SMT |
| Threshold Voltage | -2.7V |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | -30V |
| Weight | 0.2502g |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NDT454P to view detailed technical specifications.
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