The NGB8206NT4 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 390V and a maximum collector current of 20A. It has a maximum power dissipation of 150W and is packaged in a D2PAK-3 case. The transistor is rated for operation between -55°C and 175°C and is not RoHS compliant. It is available in a tape and reel packaging with 800 units per package.
PackageTO-263-3
Current Rating20A
MountingSurface Mount
Power150W
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Technical Specifications
Onsemi NGB8206NT4 technical specifications.
General
| Package/Case | TO-263-3 |
| Collector Emitter Breakdown Voltage | 390V |
| Collector-emitter Voltage-Max | 1.9V |
| Current Rating | 20A |
| Lead Free | Contains Lead |
| Max Collector Current | 20A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Power Dissipation | 150W |
| RoHS Compliant | No |
| DC Rated Voltage | 350V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NGB8206NT4 Datasheet
Download the complete datasheet for Onsemi NGB8206NT4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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