N-channel MOSFET driver with 42V drain-source breakdown voltage and 23mΩ on-resistance. Features 33A continuous drain current, 64W power dissipation, and surface mount DPAK package. Includes temperature and current limiting, ESD protection, and operates from -55°C to 150°C. RoHS compliant and lead-free.
PackageDPAK
Current Rating33A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi NID5001NT4G technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
33A
Current Rating
33A
Drain to Source Breakdown Voltage
42V
Drain to Source Resistance
23mR
Drain to Source Voltage (Vdss)
42V
Drain-source On Resistance-Max
23MR
Dual Supply Voltage
42V
Gate to Source Voltage (Vgs)
14V
Height
2.38mm
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Output Current
33A
Max Power Dissipation
64W
Mount
Surface Mount
Nominal Vgs
1.8V
Number of Outputs
1
On-State Resistance
23mR
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
64W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HDPlus™
Termination
SMD/SMT
Threshold Voltage
1.8V
DC Rated Voltage
42V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NID5001NT4G Datasheet
Download the complete datasheet for Onsemi NID5001NT4G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
