
Single N-Channel MOSFET driver with 42V drain-source breakdown voltage and 20A continuous drain current. Features 42mR on-state resistance and 2.3W power dissipation. Designed for surface mount applications in a DPAK package, operating from -55°C to 150°C. Includes temperature and current limiting for enhanced protection.
Onsemi NID5003NT4G technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 42V |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 42V |
| Drain-source On Resistance-Max | 42MR |
| Dual Supply Voltage | 42V |
| Gate to Source Voltage (Vgs) | 14V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 20A |
| Max Power Dissipation | 2.3W |
| Mount | Surface Mount |
| Nominal Vgs | 1.7V |
| Number of Elements | 1 |
| Number of Outputs | 1 |
| On-State Resistance | 42mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.3W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HDPlus™ |
| Termination | SMD/SMT |
| Threshold Voltage | 1.7V |
| DC Rated Voltage | 42V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NID5003NT4G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
