Single N-Channel MOSFET driver with 42V drain-source breakdown voltage and 20A continuous drain current. Features 42mR on-state resistance and 2.3W power dissipation. Designed for surface mount applications in a DPAK package, operating from -55°C to 150°C. Includes temperature and current limiting for enhanced protection.
PackageDPAK
Current Rating20A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi NID5003NT4G technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
20A
Current Rating
20A
Drain to Source Breakdown Voltage
42V
Drain to Source Resistance
42mR
Drain to Source Voltage (Vdss)
42V
Drain-source On Resistance-Max
42MR
Dual Supply Voltage
42V
Gate to Source Voltage (Vgs)
14V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Output Current
20A
Max Power Dissipation
2.3W
Mount
Surface Mount
Nominal Vgs
1.7V
Number of Elements
1
Number of Outputs
1
On-State Resistance
42mR
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.3W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HDPlus™
Termination
SMD/SMT
Threshold Voltage
1.7V
DC Rated Voltage
42V
Compliance
RoHS
Compliant
Datasheet
Onsemi NID5003NT4G Datasheet
Download the complete datasheet for Onsemi NID5003NT4G to view detailed technical specifications.
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