The NID6002NT4 is an N-CHANNEL MOSFET with a drain to source breakdown voltage of 70V and a continuous drain current of 6.5A. It features a DPAK-3 package and operates over a temperature range of -55°C to 150°C. The device is designed for low-side output configuration and has a power dissipation of 2.5W. It is not RoHS compliant and contains lead.
PackageDPAK
Current Rating6.5A
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi NID6002NT4 technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 6.5A |
| Current Rating | 6.5A |
| Drain to Source Breakdown Voltage | 70V |
| Drain to Source Resistance | 210mR |
| Fall Time | 660ns |
| Fault Protection | Over Voltage, Over Temperature |
| Gate to Source Voltage (Vgs) | 14V |
| Interface | On/Off |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 6.5A |
| Number of Outputs | 1 |
| Output Configuration | Low Side |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | No |
| Series | HDPlus™ |
| Turn-Off Delay Time | 840ns |
| DC Rated Voltage | 65V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NID6002NT4 Datasheet
Download the complete datasheet for Onsemi NID6002NT4 to view detailed technical specifications.
No datasheet is available for this part.
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