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Technical Specifications
Onsemi NIMD6001ANR2G technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.3A |
| Drain to Source Breakdown Voltage | 67V |
| Drain to Source Resistance | 110mR |
| Fall Time | 9000ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Interface | On/Off |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 3.3A |
| Number of Outputs | 2 |
| Output Configuration | Low Side |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15000ns |
| Turn-On Delay Time | 1700ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NIMD6001ANR2G Datasheet
Download the complete datasheet for Onsemi NIMD6001ANR2G to view detailed technical specifications.
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