
NPN bipolar power transistor featuring a 40V collector-emitter breakdown voltage and a maximum collector current of 3A. This component offers a 215MHz transition frequency and a minimum hFE of 220. Packaged in a SOT-223-4 surface-mount case, it operates within a temperature range of -55°C to 150°C and has a power dissipation of 2W. The transistor is supplied on a 1000-piece tape and reel, is RoHS compliant, and lead-free.
Onsemi NJT4031NT1G technical specifications.
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 215MHz |
| Gain Bandwidth Product | 215MHz |
| Height | 1.65mm |
| hFE Min | 220 |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 3A |
| Max Frequency | 215MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 215MHz |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NJT4031NT1G to view detailed technical specifications.
No datasheet is available for this part.
