PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 3A. Operates with a transition frequency of 160MHz and a maximum power dissipation of 2W. Packaged in a TO-261-4 (SOT-223) case, supplied on a 1000-piece tape and reel. This component is lead-free and RoHS compliant, with an operating temperature range of -55°C to 150°C.
Frequency160MHz
PackageTO-261-4
MountingSurface Mount
PolarityPNP
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Technical Specifications
Onsemi NJV4030PT1G technical specifications.
General
| Package/Case | TO-261-4 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 160MHz |
| Gain Bandwidth Product | 160MHz |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 160MHz |
| Weight | 0.006632oz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NJV4030PT1G Datasheet
Download the complete datasheet for Onsemi NJV4030PT1G to view detailed technical specifications.
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