
NPN bipolar power transistor featuring a 40V collector-emitter breakdown voltage and a continuous collector current of 3A. This component offers a maximum power dissipation of 2W and a transition frequency of 215MHz. Packaged in a SOT-223-4 (TO-261) surface-mount package, it operates within a temperature range of -55°C to 150°C and is supplied on a 1000-piece tape and reel.
Onsemi NJV4031NT1G technical specifications.
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 3A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 215MHz |
| Gain Bandwidth Product | 215MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 215MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NJV4031NT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
