The NJVMJD112G is a surface mount NPN bipolar junction transistor with a collector base voltage rating of 100V and a maximum collector current of 2A. It has a maximum power dissipation of 1.75W and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a TO-252-3 case and is lead free and RoHS compliant. It is not radiation hardened and has a transition frequency of 25MHz.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Onsemi NJVMJD112G technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 3V |
| Lead Free | Lead Free |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.75W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 25MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NJVMJD112G Datasheet
Download the complete datasheet for Onsemi NJVMJD112G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.