PNP Bipolar Junction Transistor (BJT) in DPAK package. Features 100V collector-emitter breakdown voltage, 3A continuous collector current, and 1.2V collector-emitter saturation voltage. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 15W. Packaged on a 2500-piece tape and reel, this component is lead-free and RoHS compliant.
Frequency1MHz
PackageDPAK
PolarityPNP
Power15W
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Technical Specifications
Onsemi NJVMJD32CT4G technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector-emitter Voltage-Max | 1.2V |
| Continuous Collector Current | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| Height | 2.38mm |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 3A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 15W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NJVMJD32CT4G Datasheet
Download the complete datasheet for Onsemi NJVMJD32CT4G to view detailed technical specifications.
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